NTJD4401NT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTJD4401NT1G
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT N-Channel number of channels:2 270 mW 20 V Continuous Drain Current (ID):630 mA 1.3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 2.1844 mm |
| Width | 1.3462 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 220 mΩ |
| Height | 990.6 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 630 mA |
| Max Power Dissipation | 270 mW |
| Power Dissipation | 270 mW |
| Threshold Voltage | 920 mV |
| Number of Channels | 2 |
| Input capacitance | 46 pF |
| Continuous Drain Current (ID) | 630 mA |
| Rds On Max | 375 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 83 ns |
| Turn-Off Delay Time | 786 ns |
| Element Configuration | Dual |
| Fall Time | 227 ns |
| Rise Time | 227 ns |
| Gate Charge | 1.3 nC |
| Drain to Source Resistance | 290 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 920 mV |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 600 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 19277
Distributors
pcbx
pcbxUnit Price$0.26246
Ext.Price$0.26246
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.26246 | $0.26246 |
| 10 | $0.16244 | $1.62440 |
| 50 | $0.13123 | $6.56150 |
| 100 | $0.10601 | $10.60100 |
| 500 | $0.08199 | $40.99500 |
| 1000 | $0.07387 | $73.87000 |
| 3000 | $0.06258 | $187.74000 |